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1

Standard AZ 5214E photoresist in laser interference and EBDW lithographies

Škriniarová, J., Andok, R., Pudiš, D., Benčurová, A., Nemec, P., Šušlik, L.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 996 KB

english, 2015

2

Opticalin situ monitoring of wet chemical etching

Waclavek, Ján, Krausko, Gabriel, Škriniarová, Jaroslava

Journal:

Surface and Interface Analysis

Année:

1998

Langue:

english

Fichier:

PDF, 466 KB

english, 1998

3

Avalanche photodiode with sectional InGaAsP/InP charge layer

D. Haško, J. Kováč, F. Uherek, J. Škriniarová, J. Jakabovič, L. Peternai

Journal:

Microelectronics Journal

Année:

2006

Langue:

english

Fichier:

PDF, 326 KB

english, 2006

4

Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT

G. Vanko, T. Lalinský, Š. Haščík, I. Rýger, Ž. Mozolová, J. Škriniarová, M. Tomáška, I. Kostič, A. Vincze

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 298 KB

english, 2009

5

Photoenhanced wet chemical etching of n+-doped GaN

J. Škriniarová, A. van der Hart, H.P. Bochem, A. Fox, P. Kordoš

Journal:

Materials Science and Engineering: B

Année:

2002

Langue:

english

Fichier:

PDF, 344 KB

english, 2002

6

Spatial resolution of apertureless metal-coated fiber tip for NSOM lithography determined by tip-to-tip scan

Kubicova, I., Pudis, D., Suslik, L., Skriniarova, J.

Journal:

Optik - International Journal for Light and Electron Optics

Année:

2013

Langue:

english

Fichier:

PDF, 737 KB

english, 2013

7

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Investigation of deep energy levels in heterostructures based on GaN by DLTS

Stuchlikova, L., Sebok, J., Rybar, J., Petrus, M., Nemec, M., Harmatha, L., Benkovska, J., Kovac, J., Skriniarova, J., Lalinsky, T., Paskiewicz, R., Tlaczala, M.

Année:

2010

Langue:

english

Fichier:

PDF, 153 KB

english, 2010

8

Fabrication of plasmonic thin films and their characterization by optical method and FDTD simulation technique

A. D. Boardman, D. P. Tsai, A. Kuzma, F. Uherek, J. Škriniarová, D. Pudiš, M. Weis, M. Donoval

Langue:

english

Fichier:

PDF, 708 KB

english

9

SPIE Proceedings [SPIE XIX Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics - Jelenia Gora, Poland (Tuesday 9 September 2014)] 19th Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics - Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning

Popiolek-Masajada, Agnieszka, Urbanczyk, Waclaw, Pudis, D., Skriniarova, J., Lettrichova, I., Laurencikova, A., Bencurova, A., Kovac, J., Novak, J.

Année:

2014

Langue:

english

Fichier:

PDF, 774 KB

english, 2014

10

Investigation of the AZ 5214E photoresist by the laser interference, EBDW and NSOM lithographies

Škriniarová, J., Pudiš, D., Andok, R., Lettrichová, I., Uherek, F.

Journal:

Applied Surface Science

Année:

2016

Langue:

english

Fichier:

PDF, 1.73 MB

english, 2016

11

Lithographic technologies suitable for PhC patterning and optical properties of patterned LED surfaces

Hronec, Pavol, Pudiš, Dušan, Škriniarová, Jaroslava, Kováč, Jaroslav, Andok, Robert

Journal:

Optik - International Journal for Light and Electron Optics

Année:

2017

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2017

12

Aqueous-Phase Oxidation of Furfural to Maleic Acid Catalyzed by Copper Phosphate Catalysts

Soták, Tomáš, Hronec, Milan, Gál, Miroslav, Dobročka, Edmund, Škriniarová, Jaroslava

Journal:

Catalysis Letters

Année:

2017

Langue:

english

Fichier:

PDF, 1.69 MB

english, 2017

13

[IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - Simulations of LED Patterned with IP-DIP Woodpile Structure

Kuzma, A., Urbancova, P., Sedlak, S., Skriniarova, J., Uherek, F.

Année:

2019

Langue:

english

Fichier:

PDF, 398 KB

english, 2019

14

Periodic structures prepared by two-beam interference method

J. Škriniarová, D. Pudis˘, I. Martinc˘ek, J. Kovác˘, N. Tarjányi, M. Veselý, I. Turek

Journal:

Microelectronics Journal

Année:

2007

Langue:

english

Fichier:

PDF, 819 KB

english, 2007

15

Light extraction from a light emitting diode with photonic structure in the surface layer investigated by NSOM

D. Pudiš, L'. Šušlik, J. Škriniarová, J. Kováč, I. Martinček, J. Kováč Jr., Š. Haščík, I. Kubicová, J. Novák, M. Veselý

Journal:

Optics & Laser Technology

Année:

2011

Langue:

english

Fichier:

PDF, 921 KB

english, 2011

16

Surface modification of doped ZnO thin films

S. Flickyngerova, J. Skriniarova, M. Netrvalova, J. Kovac Jr., I. Novotny, P. Sutta, V. Tvarozek

Journal:

Applied Surface Science

Année:

2010

Langue:

english

Fichier:

PDF, 696 KB

english, 2010

17

Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates

R. Paszkiewicz, B. Paszkiewicz, M. Wosko, A. Szyszka, L. Marciniak, J. Prażmowska, W. Macherzyński, J. Serafińczuk, J. Kozłowski, M. Tlaczala, J. Kováč, I. Novotný, J. Škriniarová, D. Haško

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 644 KB

english, 2008

18

AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPE

Beata Ściana, Iwona Zborowska-Lindert, Damian Radziewicz, Bogusław Boratyński, Marek Tłaczała, Jaroslav Kováč, Rudolf Srnanek, Jaroslava Škriniarová, Martin Florovič

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2008

19

Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films

T. Ižák, M. Vojs, M. Veselý, J. Škriniarová, I. Novotný, M. Michalka, R. Redhammer

Journal:

Microelectronics Journal

Année:

2009

Langue:

english

Fichier:

PDF, 475 KB

english, 2009

20

Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor

J. Kováč, J. Škriniarová, M. Florovič, J. Jakabovič, J. Chovan, R. Srnánek, A. Vincze, B. Ściana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczała

Journal:

Microelectronics Journal

Année:

2009

Langue:

english

Fichier:

PDF, 497 KB

english, 2009

21

Utilization of wet chemical etching for revealing defects in GaAs X-ray detector arrays

J. Škriniarová, A. Perd’ochová, M. Hrúzik, M. Veselý, B. Bendjus, L. Haupt, I. Besse, M. Herms

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 330 KB

english, 2005

22

Etching of n-GaN – Important step in device processing

Jaroslava Škriniarová, Jaroslav Kováč

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 368 KB

english, 2009

23

InGaAs/InGaP HEMTs: technological optimization and analytical modelling

J. Kuzmı&amp, #x0301, k, S. Hasenöhrl, R. Kúdela, Š. Haščı&amp, #x0301, k, Ž. Mozolová, T. Lalinský, P. Vogrinčič, J. Breza, J. Škriniarová, A. Fox, P. Kordoš

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 112 KB

english, 2001

24

T-shaped gates for heterostructure field effect transistors

T. Lalinský, J. Škriniarová, I. Kostič, A. Hart van der, P. Hrkút, Š. Haščı&amp, #x0301, k, L. Matay, Ž. Mozolová, P. Kordoš

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 217 KB

english, 2001

25

Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs

T Lalinský, J Škriniarová, J Kuzmı́k, S Hasenöhrl, A Fox, M Tomáška, Ž Mozolová, T Kovac̆ik, A Krajcer, P Kordoš

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 112 KB

english, 2001

26

GaAs/AlGaAs based electrically tunable RCE photodiode

J Waclawek, J Kováč, B Rhenländer, V Gottschalch, J Ŝkriniarová

Journal:

Materials Science and Engineering: B

Année:

1998

Langue:

english

Fichier:

PDF, 136 KB

english, 1998

27

Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH, and H2O2

D. Gregušová, P. Eliáš, L. Malacký, R. Kúdela, J. Škriniarová

Journal:

physica status solidi (a)

Année:

1995

Langue:

english

Fichier:

PDF, 401 KB

english, 1995

28

Experimental method for scanning the surface depletion region in nitride based heterostructures

Carsten Netzel, Jaroslava Skriniarova, Martin Herms, Hans Wenzel, Veit Hoffmann, Arne Knauer, Markus Weyers

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 290 KB

english, 2009

29

Non-Contact NSOM Lithography for 2D Photonic Structure Fabrication

Ivana Kubicova, Jaroslava Skriniarova, Dusan Pudis, Lubos Suslik, Marian Vesely

Journal:

Physics Procedia

Année:

2012

Langue:

english

Fichier:

PDF, 935 KB

english, 2012

30

2D Photonic Structures for Optoelectronic Devices Prepared by Interference Lithography

Lubos Suslik, Dusan Pudis, Jaroslava Skriniarova, Ivan Martincek, Ivana Kubicova, Jaroslav Kovac

Journal:

Physics Procedia

Année:

2012

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2012

31

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Characterisation of electrical properties of AlGaN/GaN Schottky diode at very high temperature

Chvala, A., Donoval, D., Sramaty, R., Marek, J., Kovac, J., Kordos, P., Skriniarova, J.

Année:

2010

Langue:

english

Fichier:

PDF, 140 KB

english, 2010

32

Electrical and Optical Characterization of Ni/Al0.3Ga0.7N/GaN Schottky Barrier Diodes

P. Kordoš, J. Škriniarová, A. Chvála, M. Florovič, J. Kováč, D. Donoval

Journal:

Journal of Electronic Materials

Année:

2012

Langue:

english

Fichier:

PDF, 459 KB

english, 2012

33

Effect of 2D photonic structure patterned in the LED surface on emission properties

Pudis, Dusan, Suslik, Lubos, Skriniarova, Jaroslava, Kovac, Jaroslav, Kovac, Jaroslav, Kubicova, Ivana, Martincek, Ivan, Hascik, Stefan, Schaaf, Peter

Journal:

Applied Surface Science

Année:

2013

Langue:

english

Fichier:

PDF, 904 KB

english, 2013

34

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Electrical and optical properties of ZnO/Si photodiodes with embedded CdTe and CdSe/ZnS nanoparticles

Hotovy, J., Kovac, J., Skriniarova, J., Novotny, I., Jakabovic, J., Kovac, J.

Année:

2010

Langue:

english

Fichier:

PDF, 225 KB

english, 2010

35

Gas phase hydroxylation of benzene with air–ammonia mixture over copper-based phosphate catalysts

Horváth, Blažej, Šustek, Martin, Škriniarová, Jaroslava, Omastová, Mária, Dobročka, Edmund, Hronec, Milan

Journal:

Applied Catalysis A: General

Année:

2014

Langue:

english

Fichier:

PDF, 562 KB

english, 2014

36

2D irregular structure in the LED surface patterned by NSOM lithography

Kubicova, Ivana, Pudis, Dusan, Skriniarova, Jaroslava, Kovac, Jaroslav, Jaroslav, Kovac, Jakabovic, Jan, Suslik, Lubos, Novak, Jozef, Kuzma, Anton

Journal:

Applied Surface Science

Année:

2013

Langue:

english

Fichier:

PDF, 770 KB

english, 2013

37

Study of ZnO nanostructures grown by a hydrothermal process on GaP/ZnO nanowires

Kováč, J., Hronec, P., Búc, D., Škriniarová, J., Šutta, P., Kováč, J., Novák, J.

Journal:

Applied Surface Science

Année:

2015

Langue:

english

Fichier:

PDF, 491 KB

english, 2015

38

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Light emitting diode with 2D PhC structure in the surface analysed by NSOM

Suslik, L., Pudis, D., Skriniarova, J., Kovac, J., Kovac, J., Kubicova, I., Martincek, I, Jakabovic, J., Novak, J.

Année:

2010

Langue:

english

Fichier:

PDF, 504 KB

english, 2010

39

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - 2D irregular structure patterning and analysis of LED by NSOM

Pudis, D., Kubicova, I., Skriniarova, J., Kovac, J., Jakabovic, J., Novak, J., Suslik, L., Hascik, S.

Année:

2012

Langue:

english

Fichier:

PDF, 347 KB

english, 2012

40

Interference enhanced first-order Raman band of monocrystalline silicon

Vančo, Ľubomír, Kadlečíková, Magdaléna, Breza, Juraj, Škriniarová, Jaroslava, Hronec, Pavol

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 410 KB

english, 2014

41

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Test of 24 strip line radiation detector based on semi-insulating GaAs using X-ray source

Zat'ko, B., Dubecky, F., Perd'ochova, A., Scepko, P., Melov, V., Skriniarova, J., Haupt, L.

Année:

2004

Langue:

english

Fichier:

PDF, 683 KB

english, 2004

42

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Optics of excitons in InGaAs/InP quantum wells

Borgulova, J., Rheinlander, B., Kovae, J., Uherek, F., Gottschalch, V., Wagner, G., Nassauer, S., Benndorf, G., Gerhardt, M., Skriniarova, J., Jakabovie, J.

Année:

1999

Langue:

english

Fichier:

PDF, 338 KB

english, 1999

43

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Optical and electrical characterization of photonic crystal light emitting diodes

Hronec, P., Kovac, J., Skriniarova, J., Kovac, J., Suslik, L'.

Année:

2012

Langue:

english

Fichier:

PDF, 328 KB

english, 2012

44

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices

Florovic, M., Kovac, J., Kordos, P., Skriniarova, J., Lalinsky, T., Hascik, S., Michalka, M., Donoval, D., Uherek, F.

Année:

2008

Langue:

english

Fichier:

PDF, 1.40 MB

english, 2008

45

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Emission and absorption properties of patterned LED with 2D PhC

Suslik, Lubos, Pudis, Dusan, Skriniarova, Jaroslava, Kovac, Jaroslav, Kovac, Jaroslav, Kubicova, Ivana, Novak, Jozef, Hascik, Stefan

Année:

2012

Langue:

english

Fichier:

PDF, 440 KB

english, 2012

46

[IEEE 12th Semiconducting and Insulating Materials Conference - Smolenice Castle, Slovakia (30 June-5 July 2002)] 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. - Photoenhanced wet etching of n-gallium nitride

Skriniarova, J., Michalka, M., Uherek, F., Kordos, P.

Année:

2002

Langue:

english

Fichier:

PDF, 241 KB

english, 2002

47

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Off-state stress investigation of InAlN/GaN HFETs with different AlN buffer layer

Florovic, M., Kovac, J., Behmenburg, H., Kordos, P., Skriniarova, J., Donoval, D., Heuken, M.

Année:

2010

Langue:

english

Fichier:

PDF, 349 KB

english, 2010

48

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Photoenhanced wet etching of gallium nitride for gate recessing

Skriniarova, J., Fox, A., Bochem, P., Kordos, P.

Année:

2000

Langue:

english

Fichier:

PDF, 317 KB

english, 2000

49

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Influence of layer structure on electrical properties of AlGaN/GaN HEMTs

Benko, P., Kovac, J., Chvala, A., Florovic, M., Kordos, P., Skriniarova, J., Harmatha, L.

Année:

2012

Langue:

english

Fichier:

PDF, 209 KB

english, 2012

50

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Utilization of InGaAsP charge layer in InGaAs/InP SACM APD

Hasko, D., Uherek, F., Kovac, J., Jakabovic, J., Skriniarova, J., Peternai, L.

Année:

2004

Langue:

english

Fichier:

PDF, 979 KB

english, 2004